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PD - 95222
IRLL110PBF
HEXFET(R) Power MOSFET
l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on)Specified at VGS= 4V & 5V Fast Switching Lead-Free
D
VDSS = 100V RDS(on) = 0.54
G S
ID = 1.5A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ Tc = 25C ID @ Tc = 100C IDM PD @Tc = 25C PD @TA = 25C Continuous Drain Current, VGS @ 5.0 V Continuous Drain Current, VGS @ 5.0 V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldewring Temperature, for 10 seconds
Max.
1.5 0.93 12 3.1 2..0 0.025 0.017 -/+10 50 1.5 0.31 5.5 -55 to + 150
300 (1.6mm from case)
Units
A W
W/C
VGS EAS IAR EAR dv/dt TJ, TSTG
V mJ A mJ V/ns
C
Thermal Resistance
Parameter
RJC RJA Junction-to-PCB Junction-to-Ambient. (PCB Mount)**
Typ.
--- ---
Max.
40 60
Units
C/W
** When mounted on 1'' square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
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IRLL110PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. Typ. Max. Units Conditions 100 --- --- V VGS = 0V, ID = 250A --- 0.12 --- V/C Reference to 25C, I D = 1mA --- --- 0.54 VGS = 5.0V, ID = 0.90A --- --- 0.76 VGS = 4.0V, ID = 0.75A 1.0 --- 2.0 V VDS = VGS, ID = 250A 0.57 --- --- S VDS = 25V, ID = 0.90 A --- --- 25 VDS = 100V, VGS = 0V A --- --- 250 VDS = 80V, VGS = 0V, TJ = 125C --- --- 100 VGS = 10V nA --- --- -100 VGS = -10V --- --- 6.1 ID = 5.6A --- --- 2.6 nC VDS = 80V --- --- 3.3 VGS = 5.0V, See Fig. 6 and 13 --- 9.3 --- VDD = 50V --- 47 --- ID = 5.6A ns --- 16 --- RG = 12 --- 18 --- RD = 8.4 , --- --- --- --- --- 4.0 6.0 250 80 15 --- --- --- --- --- pF nH Between lead, 6mm(0.25in) from package and center of die contact. VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol --- --- 1.5 showing the A integral reverse --- --- 12 p-n junction diode. --- --- 2.5 V TJ = 25C, IS = 1.5A, VGS = 0V --- 110 130 ns TJ = 25C, IF = 5.6A --- 0.50 0.65 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 5.6A, di/dt 75A/s, VDD V(BR)DSS,
TJ 150C
VDD=25V, starting TJ = 25C, L = 25 mH
RG = 25, IAS = 1.5A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
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IRLL110PBF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HE XF ET PRODUCT MARKING
T HIS IS AN IRF L014
INT E RNAT IONAL RE CT IF IER LOGO
PART NUMB E R
LOT CODE AXXXX
FL 014 314P
A = AS S E MB L Y S IT E DAT E CODE CODE (YYWW) YY = YEAR WW = WE E K P = DE S IGNAT E S L E AD-F RE E PRODUCT (OPT IONAL )
T OP
B OT T OM
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IRLL110PBF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 4 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 ) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 )
TR
2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 )
7 .5 5 (.2 9 7) 7 .4 5 (.2 9 4) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S . 1 3 .2 0 (.5 1 9 ) 1 2 .8 0 (.5 0 4 ) 1 5 .40 (.6 0 7) 1 1 .90 (.4 6 9) 4 7 .1 0 (.2 7 9 ) 6 .9 0 (.2 7 2 )
1 6 .3 0 (.6 4 1 ) 1 5 .7 0 (.6 1 9 )
2 .3 0 (.0 9 0 ) 2 .1 0 (.0 8 3 )
330.00 (13.000) M AX.
5 0.00 (1 .9 6 9 ) M IN .
NO TE S : 1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3
1 8 .4 0 (.72 4 ) M AX . 4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04
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